Photoelectric Conversion Characteristics of GaAs Thin Film Cells

被引：0
|
作者：
Zhou, Si-Hong [1 ]
Pan, Qing-Hui [1 ]
Luo, Zhao-Jun [1 ]
Shuai, Yong [1 ]
机构：
[1] The School of Energy Science and Engineering, Harbin Institute of Technology, Harbin,150001, China
来源：
Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics | 2021年 / 42卷 / 09期
关键词：
Absorption efficiency - Nanostructures - Semiconducting gallium - Finite element method - Gallium arsenide - Photoelectricity - III-V semiconductors;
D O I：
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中图分类号：
学科分类号：
摘要：
The absorption efficiency of GaAs thin film photovoltaic devices from visible to nearinfrared band can be effectively improved by micro-nano anti-reflection cover (ARC) and micro-nano metal structure. In this paper, finite element method (FEM) is used to analyze the influence of the micro-nano anti-reflection cover on the spectral absorption of devices, and the photoelectric conversion characteristics of the corresponding structures are obtained. The influence of the arrangement of gold nanowires on the photoelectric characteristics is further explored. The results show that the micro-nano structure can effectively improve the photoelectric conversion capability. Mastering the influence law on the internal photoelectric characteristics can provide useful guidance for the device design and preparation. © 2021, Science Press. All right reserved.
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页码：2409 / 2413
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