Multi-patterning overlay control

被引:1
|
作者
Ausschnitt, C. P.
Dasari, P.
机构
来源
关键词
overlay control; lithography; blossom metrology;
D O I
10.1117/12.772865
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The extension of optical lithography to 32nm and beyond is dependent on double-patterning (DP) at critical levels. DP integration strategies result in added degrees of freedom for overlay variation. In particular, overlay control requires assessment of error among various mask/level combinations. The Blossom overlay metrology approach minimizes the size of the overlay marks associated with each mask/level while maximizing the density of marks within the overlay metrology tool's field of view (FOV). We examine Blossom enabled use cases in DP lithography control; specifically, within-field and multiple mask/level sampling.
引用
下载
收藏
页数:5
相关论文
共 50 条
  • [11] Advanced multi-patterning and hybrid lithography techniques
    Pikus, Fedor G.
    Torres, Andres
    2016 21ST ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC), 2016, : 611 - 616
  • [12] Making the most of color in your multi-patterning layouts
    Abercrombie, David
    Pearson, Alex
    SOLID STATE TECHNOLOGY, 2018, 61 (02) : 26 - 29
  • [13] Spacer multi-patterning control strategy with optical CD metrology on device structures
    Lee, Jongsu
    Lee, Byoung-Hoon
    Ma, Won-Kwang
    Han, Sang-Jun
    Kim, Young-Sik
    Kwak, Noh-Jung
    Theeuwes, Thomas
    Guo, Wei
    Song, Yi
    Wisse, Baukje
    Kruijswijk, Stefan
    Cramer, Hugo
    Welch, Steven
    Verma, Alok
    Zhang, Rui
    Chai, Yvon
    Hsu, Sharon
    Miceli, Giacomo
    Sun, Kyu-Tae
    Byun, Jin-Moo
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXX, 2016, 9778
  • [14] Evolution of lithography-to-etch bias in multi-patterning processes
    Panneerchelvam, Prem
    Agarwal, Ankur
    Huard, Chad M. M.
    Pret, Alessandro Vaglio
    Mani, Antonio
    Gronheid, Roel
    Demand, Marc
    Kumar, Kaushik
    Paolillo, Sara
    Lazzarino, Frederic
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (06):
  • [15] Computational Process Modeling and Correction in a Multi-Patterning Era
    Spence, Chris
    OPTICAL MICROLITHOGRAPHY XXIX, 2016, 9780
  • [16] EUV based multi-patterning schemes for advanced DRAM nodes
    Das, Sayantan
    Sah, Kaushik
    Fallica, Roberto
    Chen, Zhijin
    Halder, Sandip
    Cross, Andrew
    De Simone, Danilo
    Treska, Fergo
    Leray, Philippe
    Kim, Ryoung Han
    Maguire, Ethan
    Wei, Chih-, I
    Fenger, Germain
    Lafferty, Neal
    Lee, Jeonghoon
    ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXIX, 2022, 12055
  • [17] Desirable Material Selection on Self-Aligned Multi-Patterning
    Koike, Kyohei
    Yamada, Kazuki
    Yamato, Masatoshi
    Yaegashi, Hidetami
    Seshimo, Takehiro
    Dazai, Takahiro
    Ohmori, Katsumi
    ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXV, 2018, 10586
  • [18] Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process
    Lee, Sanghun
    Seo, Seunggi
    Noh, Wontae
    Oh, Il-Kwon
    Kim, Hyungjun
    IITC2021: 2021 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2021,
  • [19] Combinatorial overlay control for double patterning
    Ausschnitt, Christopher P.
    Halle, Scott D.
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2009, 8 (01):
  • [20] Enabling Capability of Multi-Patterning towards 10nm and beyond
    Yaegashi, Hidetami
    Oyama, Kenichi
    Hara, Arisa
    Natori, Sakurako
    Yamauchi, Shohei
    Yamato, Masatoshi
    Okabe, Noriaki
    Koike, Kyohei
    2015 China Semiconductor Technology International Conference, 2015,