Evolution of lithography-to-etch bias in multi-patterning processes

Quantitatively accurate, physics-based, computational modeling of etching and lithography processes is essential for modern semiconductor manufacturing. This paper presents lithography and etch models for a trilayer process in a back end of the line manufacturing vehicle. These models are calibrated and verified against top-down scanning electron microscope (SEM) and cross-sectional SEM measurements. Calibration errors are within 2 nm, while the maximum verification error is less than 3 nm. A fluorocarbon plasma etch of the spin-on-glass (SOG) layer accounts for most of the etch bias present in the process. The tapered profile in the SOG etch step is generated due to the polymerization process by fluorocarbon radicals generated in the plasma. The model predicts a strong correlation between the etch bias in the SOG etch step and the neutral-to-ion flux ratio in the plasma. The second etch step of the flow, which etches the spin-on-carbon (SOC) layer using an H-2/N-2 plasma, results in a negative etch bias (increase in CDs) for all measured features. The ratio of hydrogen to nitrogen radical fluxes effectively controls the etch bias in this step, with the model predicting an increase in the etch bias from negative to positive values as the H-to-N ratio decreases. The model also indicates an aspect ratio dependent etch rate in the SOG and SOC etch steps, as seen in the etch front evolution in a three-dimensional test feature. The third and final step of the process, SiO2-etch, generates an insignificant etch bias in all the test structures. Finally, the accuracy of the etch simulations is shown to be dependent on the accuracy of the incoming photoresist shapes. Models that consider only the top-down SEM measurement as input and do not account for an accurate photoresist profile, suffered significant errors in the post-etch CD predictions. Published under an exclusive license by the AVS