A 48 GHz fully integrated differential VCO in InP DHBT technology

被引：0
|
作者：
Withitsoonthorn, S [1 ]
Blayac, S [1 ]
Riet, M [1 ]
Berdaguer, P [1 ]
Gonzalez, C [1 ]
机构：
[1] Alcatel R&I, Lab OPTO, F-91460 Marcoussis, France
来源：
33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe the development of a 48 GHz fully integrated differential VCO, using InP/InGaAs double heterojunction bipolar transistors (DHBTs), for 40 Gbit/s optical communication systems. This VCO is based on a balanced Colpitts-type topology where a coplanar transmission line is used as the inductive resonator element. The oscillation frequency is tuneable by varying the base-collector junction capacitance of DHBTs without using any external varactors. The VCO exhibits 46.4 - 49.5 GHz (6.5%) tuning range over a tuning voltage range of 1 V. The circuit provides a non-corrected single-ended output power between -10.5 and -13.5 dBm while the phase noise varies between -75 and -80 dBc/Hz at 1 MRz offset.
引用
收藏
页码：571 / 574
页数：4
相关论文
共 50 条
  • [41] A 83 GHz InP DHBT static frequency divider
    Zhang Youtao
    Li Xiaopeng
    Zhang Min
    Cheng Wei
    Chen Xinyu
    [J]. JOURNAL OF SEMICONDUCTORS, 2014, 35 (04)
  • [42] A 220-GHz InP DHBT Power Amplifier With Integrated Planar Spatial Power Combiner
    Chen, Yapei
    Zhang, Yong
    Sun, Yan
    Li, Oupeng
    Lu, Haiyan
    Cheng, Wei
    Xu, Ruimin
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2019, 29 (03) : 225 - 227
  • [43] An Efficient 290 GHz Harmonic Oscillator in Transferred-Substrate InP-DHBT Technology
    Hossain, M.
    Nosaeva, K.
    Janke, B.
    Weimann, N.
    Krueger, O.
    Krozer, V.
    Heinrich, W.
    [J]. 2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2015, : 841 - 844
  • [44] 220-325 GHz high-isolation SPDT switch in InP DHBT technology
    Shivan, T.
    Hossain, M.
    Stoppel, D.
    Weimann, N.
    Boppel, S.
    Doerner, R.
    Heinrich, W.
    Krozer, V.
    [J]. ELECTRONICS LETTERS, 2018, 54 (21) : 1222 - 1223
  • [45] 100+GHz static divide-by-2 circuit in InP-DHBT technology
    Mokhtari, M
    Fields, C
    Rajavel, RD
    Sokolich, M
    Jensen, JF
    Stanchina, WE
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (09) : 1540 - 1544
  • [46] A 14-GHz 8-bit Direct Digital Synthesizer in InP DHBT Technology
    Li, Xiaopeng
    Zhang, Yi
    Wang, Zhigong
    Zhang, Youtao
    MinZhang
    WeiCheng
    Gao, Hao
    [J]. 2019 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT2019), 2019,
  • [47] 100+GHz static divide-by-2 circuit in InP-DHBT technology
    Mokhtari, M
    Fields, C
    Rajavel, RD
    [J]. GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 291 - 293
  • [48] Design of a [DC-20 GHz] buffered track and hold circuit in InP DHBT technology
    El Aabbaoui, Hassan
    Gorisse, Benoit
    Rolland, Nathalie
    Benlarbi-Delai, Aziz
    Fel, Nicolas
    Allouche, Virginie
    Leclerc, Pascal
    Rionde, Bernard
    Rolland, Paul-Alain
    [J]. 2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 121 - +
  • [49] A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology
    Shivan, Tanjil
    Hossain, Maruf
    Doerner, Ralf
    Schulz, Steffen
    Johansen, Tom
    Boppel, Sebastian
    Heinrich, Wolfgang
    Krozer, Viktor
    [J]. 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 1253 - 1256
  • [50] Fully integrated and plastic packaged 24 GHz VCO for ISM and automotive applications
    Cortese, P
    Camiade, M
    Doser, W
    Schaefer, J
    Moeller, N
    [J]. 34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2004, : 253 - 255
12345