220-325 GHz high-isolation SPDT switch in InP DHBT technology

被引：11

作者：

Shivan, T. ^{[1
]}

Hossain, M. ^{[1
]}

Stoppel, D. ^{[1
]}

Weimann, N. ^{[1
,2
]}

Boppel, S. ^{[1
]}

Doerner, R. ^{[1
]}

Heinrich, W. ^{[1
]}

Krozer, V. ^{[1
,3
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Berlin, Germany

[2] Univ Duisburg Essen, Duisburg, Germany

[3] Goethe Univ Frankfurt, Frankfurt, Germany

来源：

ELECTRONICS LETTERS | 2018年 / 54卷 / 21期

关键词：

microwave switches; indium compounds; heterojunction bipolar transistors; III-V semiconductors; millimetre wave bipolar transistors; broadband single-pole-double-throw switch; SPDT switch configuration; low intrinsic capacitance; three-stage SPDT switch; high-isolation SPDT switch; transferred substrate InP DHBT technology; wideband SPDT switches; size; 800; 0; nm; power; 9; mW; frequency; 220; 0 GHz to 325; GHz; InP;

D O I：

10.1049/el.2018.6028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband single-pole-double-throw (SPDT) switch is presented covering 220-325 GHz in 800 nm transferred substrate InP DHBT technology. The SPDT switch configuration employs shunt-topology. The circuit achieves an isolation of >36 dB within the band with very low DC power of 9 mW, benefitting from the low intrinsic capacitance of the transistors. This is the highest reported isolation for wideband SPDT switches covering 220-325 GHz. This three-stage SPDT switch also demonstrates the highest isolation of 12 dB per stage in this frequency range.

引用

页码：1222 / 1223

页数：2

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