Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology

被引：31
|
作者：
Eriksson, Klas [1 ]
Gunnarsson, Sten E. [1 ]
Vassilev, Vessen [1 ]
Zirath, Herbert [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
来源：
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2014年 / 4卷 / 01期
关键词：
Double heterojunction bipolar transistor (DHBT); H-band; indium phosphide (InP); millimeter-wave amplifier; monolithic microwave integrated circuit (MMIC); LOW-NOISE AMPLIFIER; SUBMILLIMETER-WAVE; RECEIVER;
D O I：
10.1109/TTHZ.2013.2275900
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
引用
收藏
页码：56 / 64
页数：9
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