Optimal Magnetic Graphite Heater Design for Impurity Control in Single-Crystal Si Grower Using Crystal Growth Simulation

被引：0

作者：

Jeon, Hye Jun ^{[1
,2
]}

Park, Hyeonwook ^{[1
]}

Alhammadi, Salh ^{[1
]}

Jung, Jae Hak ^{[1
]}

Kim, Woo Kyoung ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Chem Engn, Gyongsan 38541, South Korea

[2] S TECH Co Ltd, R&D Team, Daegu 42921, South Korea

来源：

PROCESSES | 2022年 / 10卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

single crystal silicon; arbitrary magnetic device; impurity; graphite heater; crystal growth furnace; crystal growth simulation; NUMERICAL-SIMULATION; CZOCHRALSKI GROWTH; MELT FLOW; OXYGEN; FIELD; VACANCY; IMPACT;

D O I：

10.3390/pr10010070

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

In this paper, we report a successfully modified single-crystal Si growth furnace for impurity control. Four types of arbitrary magnetic heater (AMGH) systems with 3, 4, 5, and poly parts were designed in a coil shape and analyzed using crystal growth simulation. The concentration of oxygen impurities in single-crystal Si ingots was compared among the designed AMGHs and a normal graphite heater (NGH). The designed AMGHs were confirmed to be able to control turbulence and convection in a molten state, which created a vortex that influenced the oxygen direction near the melt-crystal interface. It was confirmed that replacing NGH with AMGHs resulted in a reduction in the average oxygen concentration at the Si melt-crystal interface by approximately 4.8%.

引用

页数：18

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