Single-crystal growth of triphenylphosphine using the czochralski method
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作者:
Saitoh, Keiki
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Iwate Univ, Grad Sch Art & Sci, Ueda Morioka 0208551, JapanIwate Univ, Grad Sch Art & Sci, Ueda Morioka 0208551, Japan
Saitoh, Keiki
[1
]
Kikuchi, Mamoru
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Iwate Univ, Grad Sch Art & Sci, Ueda Morioka 0208551, JapanIwate Univ, Grad Sch Art & Sci, Ueda Morioka 0208551, Japan
Kikuchi, Mamoru
[1
]
Yoshimoto, Noriyuki
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Iwate Univ, Grad Sch Art & Sci, Ueda Morioka 0208551, Japan
Iwate Univ, Dept Phys Sci & Mat Engn, Ueda Morioka, JapanIwate Univ, Grad Sch Art & Sci, Ueda Morioka 0208551, Japan
Yoshimoto, Noriyuki
[1
,2
]
机构:
[1] Iwate Univ, Grad Sch Art & Sci, Ueda Morioka 0208551, Japan
[2] Iwate Univ, Dept Phys Sci & Mat Engn, Ueda Morioka, Japan
The Czochralski (Cz) method for organic materials with a low melting point was used to fabricate single-crystal growth apparatus, and the single crystals of triphenylphosphine were successfully grown. The unit cell parameters and orientations of the grown crystals were determined through X-ray diffractometry. Further, the necking process was also introduced into the crystal growth by controlling the melt temperature during the Cz growth. The necking was effective in suppressing crack propagation from the seed crystal. Moreover, using the grown single crystals as the seed crystal allowed to control the crystal orientation of these crystals.