Renovation of Power Devices by GaN-based Materials

被引：0
|
作者：
Ueda, Daisuke [1 ]
机构：
[1] Kyoto Inst Technol, Matsugasaki, Kyoto 6068585, Japan
来源：
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年
关键词：
TRANSISTOR; INJECTION; GIT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Attention has been paid to power electronics to make energy-saving society. Though the wide bandgap semiconductors are expected to realize efficient power converters by replacing Si ones, it will be beneficial to look back their evolution paths. Si power devices have been changing their structures to adapt to the wide range of requirements such as, blocking-voltage, handling-current, and switching-speed. In this paper, some perspectives of the device-design for GaN-based power transistors are introduced depending on the three different application layers.
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页数：4
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