Current instabilities in GaN-based devices

被引：130

作者：

Daumiller, I ^{[1
]}

Theron, D

Gaquière, C

Vescan, A

Dietrich, R

Wieszt, A

Leier, H

Vetury, R

Mishra, UK

Smorchkova, IP

Keller, S

Nguyen, NX

Nguyen, C

Kohn, E

机构：

[1] Univ Ulm, Dept Electron Devices & Circuit, D-89069 Ulm, Germany

[2] IEMN, UMR CNRS 8520, F-59652 Villeneuve Dascq, France

[3] Daimler Chrysler AG, Res & Technol, D-89013 Ulm, Germany

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[5] HRL Labs, LLC, Malibu, CA 90265 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 02期

关键词：

AlGaN/GaN heterostructure FETs; current dispersion;

D O I：

10.1109/55.902832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current dispersion effects have been experimentally investigated in a variety, of AlGaN/GaN heterostructure FETs with large signal and switching measurements including HEMTs with doped and undoped barrier layer, A range of dispersion frequencies from 10(-3) Hz to 10 GHz were observed, where the output current amplitude is drastically reduced. Through this effect the full channel charge of AlGaN/GaN heterostructure FET may be completely depleted under specific bias conditions. This indicates that this phenomena cannot be related to deep traps alone, hut is also connected to piezo related charge states and conduction to these states.

引用

页码：62 / 64

页数：3

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