Thermal conductivity measurement of Ge2Sb2Te5 thin film using improved 3ω method

被引:1
|
作者
Kim, Kyeongtae [1 ]
Kwon, Ohmyoung [2 ]
机构
[1] Incheon Natl Univ, Dept Mech Engn, Incheon 22012, South Korea
[2] Korea Univ, Dept Mech Engn, Seoul 02841, South Korea
关键词
thermal property; phase change material; GST; 3 omega method;
D O I
10.32908/hthp.v48.696
中图分类号
O414.1 [热力学];
学科分类号
摘要
Understanding how heat is transferred in nanostructured materials is essential for improving nanoscale devices and developing novel devices. In particular, the measurement and analysis of heat transfer in phase change random access memories (PCRMs) are important, because this local heat transfer determines the development and innovation of PCRMs. In this study, we improved the existing 3 omega method to measure the thermal conductivity of a nanoscale thin film composed of Ge2Sb2Te5 (GST), whose thermal conductivity is changed by the limitation of phonons' transport. The heat transfer of the thin GST film was analyzed by applying the phonons' kinetic theory (gray model) and measurement results from the improved 3 omega method. The measured thermal conductivity of GST and the improved 3 omega method are expected to be used in the phase change random-access memory industry for developing novel devices.
引用
收藏
页码:71 / 81
页数:11
相关论文
共 50 条
  • [31] Influence of Silicon Doping on the Properties of Sputtered Ge2Sb2Te5 Thin Film
    Jeong, Seong-Min
    Kim, Kyung-Ho
    Choi, Soon-Mok
    Lee, Hong-Lim
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [32] Evidence of Heterogeneous Strain during Crystallization of Ge2Sb2Te5 Thin Film
    Fillot, F.
    Loubriat, S.
    Gergaud, P.
    Maitrejean, S.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (07) : H285 - H287
  • [33] Amorphization kinetics of Ge2Sb2Te5 thin film induced by ion implantation
    De Bastiani, R.
    Piro, A. M.
    Grimaldi, M. G.
    Rimini, E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (572-576): : 572 - 576
  • [34] Structural transformations in thin Ge2Sb2Te5 films
    Kozyukhin, S. A.
    Sherchenkov, A. A.
    Gorshkova, E. V.
    Kudoyarova, V. Kh.
    Vargunin, A. I.
    INORGANIC MATERIALS, 2009, 45 (04) : 361 - 365
  • [35] Structural transformations in thin Ge2Sb2Te5 films
    S. A. Kozyukhin
    A. A. Sherchenkov
    E. V. Gorshkova
    V. Kh. Kudoyarova
    A. I. Vargunin
    Inorganic Materials, 2009, 45 : 361 - 365
  • [36] Multilevel Recording in Ge2Sb2Te5 Thin Films
    S. A. Fefelov
    L. P. Kazakova
    N. A. Bogoslovskiy
    A. B. Bylev
    A. O. Yakubov
    Semiconductors, 2020, 54 : 450 - 453
  • [37] Multilevel Recording in Ge2Sb2Te5 Thin Films
    Fefelov, S. A.
    Kazakova, L. P.
    Bogoslovskiy, N. A.
    Bylev, A. B.
    Yakubov, A. O.
    SEMICONDUCTORS, 2020, 54 (04) : 450 - 453
  • [38] Effects of thermal and laser annealing on the structure of Ge2Sb2Te5 thin films
    Turmanova, K.
    Prikhodko, O.
    Tolepov, Zh.
    Maksimova, S.
    Manabaev, N.
    Almas, N.
    CHALCOGENIDE LETTERS, 2024, 21 (07): : 575 - 581
  • [39] Study on the crystallization behavior of Ge2Sb2Te5 and silicon doped Ge2Sb2Te5 films
    Jiang, Yifan
    Xu, Ling
    Chen, Jing
    Zhang, Rui
    Su, Weining
    Yu, Yao
    Ma, Zhongyuan
    Xu, Jun
    ADVANCED ENGINEERING MATERIALS III, PTS 1-3, 2013, 750-752 : 1044 - +
  • [40] The correlation of electrical conductivity with the microstructure of Ge2Sb2Te5 thin films alloyed with Sn
    Yin, Qixun
    Chen, Leng
    MATERIALS RESEARCH EXPRESS, 2017, 4 (01)