Quantum chemical models of defects in thin silicon films

被引：0

作者：

Dzelme, J

Zapol, BP

Misiuk, A

机构：

[1] Latvian State Univ, Dept Chem Phys, LV-1586 Riga, Latvia

[2] Inst Electron Technol, PL-02668 Warsaw, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2000年 / 8卷 / 04期

关键词：

silicon; oxygen; point defect; quantum chemistry; cluster model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cluster models and quantum chemical methods were used to investigate electronic structure and paper ties of defects in silicon, including extended defects of crystals, such as surface and interphases dislocations, which create legions of compression and strain. Pressure effect was simulated by reduction of the lattice constant. This approach is adequate for investigation of thin films. Reduced influence of chemical bonding and enhanced use of free volume during O migration under high pressure have been should. The Si and O interstitial migration activation energies were estimated as 4.21 eV and 2.73 eV, respectively, the former being indifferent to pressure.

引用

下载

页码：292 / 294

页数：3

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