A study of 4H-SiC diode avalanche shaper

被引：3
|
作者：
Afanasyev, A. V. [1 ]
Ivanov, B. V. [1 ]
Ilyin, V. A. [1 ]
Smirnov, A. A. [1 ]
Kardo-Sysoev, A. F. [2 ]
Shevchenko, S. A. [1 ]
机构：
[1] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia
[2] RAS, Ioffe Inst, St Petersburg 194021, Russia
来源：
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷
关键词：
D O I：
10.1088/1742-6596/917/8/082002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of the simulation of an ultrashort pulse generator with a 4H-SiC diode avalanche shaper implemented as a superfast closing switch are presented. The possibility of shaping a voltage pulse with an amplitude of 3300 V and 19 picosecond rise time is demonstrated.
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页数：4
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