Observation of negative differential resistance in GaAlAs single-barrier heterostructure at room temperature

被引：8
|
作者：
Emelett, SJ [1 ]
Goodhue, WD
Karakashian, AS
Vaccaro, K
机构：
[1] Univ Massachusetts, Dept Phys & Appl Phys, Lowell, MA 01851 USA
[2] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 05期
关键词：
D O I：
10.1063/1.1645638
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Observation of experimental negative differential resistance at room temperature due to electron tunneling in a multiple-step single-barrier GaAlAs heterostructure is reported. Theoretical investigations of a three-step single-barrier heterostructure were conducted using the transfer matrix method and the Tsu-Esaki approach to obtain the transmission coefficients and current-voltage characteristic, respectively. The system was designed based on these calculations, and grown with molecular beam epitaxy. The diode exhibited negative differential resistance at 300 K and had a peak-to-valley current ratio above unity, which was in agreement with the predicted values. (C) 2004 American Institute of Physics.
引用
收藏
页码：2930 / 2932
页数：3
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