Negative differential resistance in porous silicon devices at room temperature

被引：19

作者：

Marin, Oscar ^{[1
,2
]}

Toranzos, Victor ^{[3
]}

Urteaga, Raul ^{[4
]}

Comedi, David ^{[1
,2
]}

Koropecki, Roberto R. ^{[4
]}

机构：

[1] Univ Nacl Tucuman, Fac Ciencias Exactas & Tecnol, LAFISO, CONICET, RA-4000 San Miguel De Tucuman, Tucuman, Argentina

[2] Univ Nacl Tucuman, Fac Ciencias Exactas & Tecnol, Nanoproject, RA-4000 San Miguel De Tucuman, Tucuman, Argentina

[3] Univ Nacl Nordeste, Fac Ciencias Exactas & Nat & Agrimensura, Corrientes, Argentina

[4] Univ Nacl Litoral, CONICET, Inst Fis Litoral Santa Fe, RA-3000 Santa Fe, Argentina

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 79卷

关键词：

Negative differential resistance; Porous silicon devices; Telegraphic noise; Coulomb repulsion;

D O I：

10.1016/j.spmi.2014.12.019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current-voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：45 / 53

页数：9

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