Modeling of thermal conductivity of polycrystalline GaN films

被引:0
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作者
Kotchetkov, D [1 ]
Balandin, AA [1 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present preliminary results of a theoretical investigation of the thermal conductivity of polycrystalline GaN films. It is assumed that grain boundaries play a major role in limiting the thermal conductivity, which is calculated using the phonon-hopping transport approach. The effect of the grain size, size dispersion, and inter-grain interface structure on the thermal conductivity values is analyzed. The obtained results are compared with available experimental data for polycrystalline films and model predictions for crystalline GaN films.
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页码:215 / 220
页数:6
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