Hopping conductivity in polycrystalline diamond films

被引：1
|
作者：
Kopylov, P. G. [1 ]
Lotonov, A. M. [1 ]
Apolonskaya, I. A. [1 ]
Obraztsov, A. N. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Chair Phys Polymers & Crystals, Moscow 119991, Russia
来源：
MOSCOW UNIVERSITY PHYSICS BULLETIN | 2009年 / 64卷 / 02期
关键词：
polycrystalline diamond; chemical vapor deposition; dielectric spectroscopy; IMPEDANCE SPECTROSCOPY; AC CONDUCTANCE; TRANSPORT; DC;
D O I：
10.3103/S0027134909020131
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The results of the experimental study of the conductivity of a polycrystalline diamond film by dielectric spectroscopy are presented. A diamond film about 200 mu m thick was grown by microwave plasma-assisted chemical vapor deposition for 180 h. Two pronounced local peaks in the frequency dependence of the conductivity were observed. The relevant frequencies were temperature-dependent. These data permit us to hypothesize that the hopping mechanism of conductivity occurs in the polycrystalline diamond film. Two types of electrically active centers with different activation energies and relaxation times are involved in the conductivity.
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收藏
页码：161 / 165
页数：5
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