The concept of "threshold voltage" in organic field-effect transistors

被引:0
|
作者
Horowitz, G
Hajlaoui, R
Bouchriha, H
Bourguiga, R
Hajlaoui, M
机构
[1] CNRS, Mat Mol Lab, F-94320 Thiais, France
[2] Fac Sci Tunis, Phys Mat Condensee Lab, Tunis 1060, Tunisia
关键词
D O I
10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The performance of organic field-effect transistors (OFETs) has improved substantially in recent years. Their field-effect mobilities are now comparable to that of hydrogenated amorphous silicon thin-film transistors (TFTs). Both TFTs and OFETs operate in the accumulation regime and the authors here develop a comprehensive model for OFETs in this regime. They show that, in the case of a constant mobility, a threshold voltage cannot be defined. The threshold voltage observed in practice is attributed to a gate-voltage-dependent mobility.
引用
收藏
页码:923 / +
页数:6
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