The concept of "threshold voltage" in organic field-effect transistors

被引：0

作者：

Horowitz, G

Hajlaoui, R

Bouchriha, H

Bourguiga, R

Hajlaoui, M

机构：

[1] CNRS, Mat Mol Lab, F-94320 Thiais, France

[2] Fac Sci Tunis, Phys Mat Condensee Lab, Tunis 1060, Tunisia

来源：

ADVANCED MATERIALS | 1998年 / 10卷 / 12期

关键词：

D O I：

10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The performance of organic field-effect transistors (OFETs) has improved substantially in recent years. Their field-effect mobilities are now comparable to that of hydrogenated amorphous silicon thin-film transistors (TFTs). Both TFTs and OFETs operate in the accumulation regime and the authors here develop a comprehensive model for OFETs in this regime. They show that, in the case of a constant mobility, a threshold voltage cannot be defined. The threshold voltage observed in practice is attributed to a gate-voltage-dependent mobility.

引用

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页码：923 / +

页数：6

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