Size Effects of Microstructure during Plasma Immersion Ion Implantation

被引：0

作者：

Gong, Chunzhi ^{[1
]}

Wang, Zhijian ^{[1
]}

Tian, Xiubo ^{[1
]}

Yang, Shiqin ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, State Key Lab Adv Welding Prod & Technol, Harbin 150001, Peoples R China

来源：

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年

关键词：

NANOTRIBOLOGY; MEMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma immersion ion implantation (PBII) has been regarded as an effective tool to enhance surface properties. The implantation dynamics during plasma ion implantation of small component used in micro-electromechanical systems (MEMS) has seldom been investigated. Numerical simulation of PBII by Particle-in-cell / Monte Carlo collision method has been launched to understand the effect of small target dimension. As the characteristic size of the component decreases, the electric field strength near the top surface increases and the thickness of plasma sheath also decreases with a higher impact energy. In summary the implantation efficiency increases significantly.

引用

下载

页码：1451 / 1452

页数：2

共 50 条

[21] Electrical effects of nitrogen plasma immersion ion implantation on silicon
Chen, SM
Shannon, JM
Gwilliam, RM
Sealy, BJ
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 901 - 904
[22] Electrical effects of nitrogen plasma immersion ion implantation on silicon
Univ of Surrey, Surrey, United Kingdom
Nucl Instrum Methods Phys Res Sect B, (901-904):
[23] Plasma immersion ion implantation of UHMWPE
Dong, H
Bell, T
Blawert, C
Mordike, BL
JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (13) : 1147 - 1149
[24] Plasma-immersion ion implantation
Thomae, RW
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 139 (1-4): : 37 - 42
[25] Plasma immersion ion implantation of polyethylene
Kondyurin, A
Karmanov, V
Guenzel, R
VACUUM, 2001, 64 (02) : 105 - 111
[26] Plasma-immersion ion implantation
Thomae, Rainer W.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 139 (1-4): : 37 - 42
[27] Instrumentation for plasma immersion ion implantation
López-Callejas, R
Valencia-Alvarado, R
Muñoz-Castro, AE
Godoy-Cabrera, OG
Tapia-Fabela, JL
REVIEW OF SCIENTIFIC INSTRUMENTS, 2002, 73 (12): : 4277 - 4282
[28] Plasma immersion ion implantation and deposition
You, YZ
Chun, HG
Kim, DI
Lee, JH
Cha, BC
Choi, BK
Lee, JH
Korus 2005, Proceedings, 2005, : 565 - 567
[29] Plasma-immersion ion implantation
Mantese, JV
Brown, IG
Cheung, NW
Collins, GA
MRS BULLETIN, 1996, 21 (08) : 52 - 56
[30] Modeling of the relationship between implantation parameters and implantation dose during plasma immersion ion implantation
Tian, XB
Chu, PK
PHYSICS LETTERS A, 2000, 277 (01) : 42 - 46

← 1 2 3 4 5 →