Atomic layer deposition and characterization of HfO2 films on noble metal film substrates

被引：18
|
作者：
Kukli, K [1 ]
Aaltonen, T
Aarik, J
Lu, J
Ritala, M
Ferrari, S
Hårsta, A
Leskelä, M
机构：
[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland
[2] Univ Tartu, Inst Phys, EE-51010 Tartu, Estonia
[3] Uppsala Univ, Dept Engn Sci, Angstrom Microstruct Lab, SE-75121 Uppsala, Sweden
[4] Uppsala Univ, Dept Chem Mat, Angstrom Lab, SE-75121 Uppsala, Sweden
[5] INFM, Lab MDM, I-20041 Agrate Brianza, MI, Italy
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 07期
关键词：
D O I：
10.1149/1.1922888
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
HfO2 films were grown by atomic layer deposition from HfCl4 and H2O on atomic layer deposited 40-70 nm thick platinum, iridium, and ruthenium films in the temperature range 200-600 degrees C. The phase formed in the 30-50 nm thick HfO2 films was monoclinic HfO2 dominating over amorphous material without noticeable contribution from metastable crystallographic polymorphs. The metal-dielectric-metal capacitor structures formed after evaporating Al gate electrodes demonstrated effective permittivity values in the range 11-16 and breakdown fields reaching 5 MV/cm. Iridium electrode films showed the highest stability in terms of reliability and reproducibility of dielectric characteristics. (c) 2005 The Electrochemical Society. All rights reserved.
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页码：F75 / F82
页数：8
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