共 36 条
Al0.45Ga0.55As/GaAs-based single-mode distributed-feedback quantum-cascade lasers with surface gratings
被引:0
|作者:
Szerling, Anna
[1
]
Kruszka, Renata
[1
]
Kosiel, Kamil
[1
]
Wzoreki, Marek
[1
]
Golaszewskal, Krystyna
[1
]
Trajnerowicz, Artur
[1
]
Karbownik, Piotr
[1
]
Kuc, Maciej
[2
]
Czyszanowski, Tomasz
[2
]
Walczakowski, Michal
[3
]
Palka, Norbert
[3
]
机构:
[1] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Lodz Univ Technol, Inst Phys, Photon Grp, Wolczanska 219, PL-90924 Lodz, Poland
[3] Mil Univ Technol, Kaliskiego 2, PL-00908 Warsaw, Poland
来源:
关键词:
semiconductor laser;
quantum-cascade laser;
single - mode emitting laser;
Bragg grating;
distributed-feedback laser;
semiconductor device fabrication;
GROWTH;
D O I:
10.1117/12.2252791
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Conditions of fabrication of first order distributed-feedback surface gratings designed for single-mode Al0.45Ga0.55As/GaAs quantum cascades lasers with the emission wavelength of about 10 mu m are presented. The 1 mu m-deep rectangular-shaped gratings with the period of about 1.55 mu m and duty cycle in the range of 65-71% made by the standard photolithography are demonstrated. The wavenumber difference of about 7 cm(-1) at 77 K is observed for the radiation emitted by lasers fabricated from the same epitaxial structure with ridge widths in the range of 15-25 mu m. Moreover, the emission wavelength of the lasers could be tuned with temperature at a rate of 1 nm/K in the temperature range of 77-120 K. The full width at half maximum of the emitted spectra is similar to 0.4 cm(-1).
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页数:11
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