Al0.45Ga0.55As/GaAs-based single-mode distributed-feedback quantum-cascade lasers with surface gratings

被引：0
|
作者：
Szerling, Anna [1 ]
Kruszka, Renata [1 ]
Kosiel, Kamil [1 ]
Wzoreki, Marek [1 ]
Golaszewskal, Krystyna [1 ]
Trajnerowicz, Artur [1 ]
Karbownik, Piotr [1 ]
Kuc, Maciej [2 ]
Czyszanowski, Tomasz [2 ]
Walczakowski, Michal [3 ]
Palka, Norbert [3 ]
机构：
[1] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Lodz Univ Technol, Inst Phys, Photon Grp, Wolczanska 219, PL-90924 Lodz, Poland
[3] Mil Univ Technol, Kaliskiego 2, PL-00908 Warsaw, Poland
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS XVI | 2017年 / 10123卷
关键词：
semiconductor laser; quantum-cascade laser; single - mode emitting laser; Bragg grating; distributed-feedback laser; semiconductor device fabrication; GROWTH;
D O I：
10.1117/12.2252791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Conditions of fabrication of first order distributed-feedback surface gratings designed for single-mode Al0.45Ga0.55As/GaAs quantum cascades lasers with the emission wavelength of about 10 mu m are presented. The 1 mu m-deep rectangular-shaped gratings with the period of about 1.55 mu m and duty cycle in the range of 65-71% made by the standard photolithography are demonstrated. The wavenumber difference of about 7 cm(-1) at 77 K is observed for the radiation emitted by lasers fabricated from the same epitaxial structure with ridge widths in the range of 15-25 mu m. Moreover, the emission wavelength of the lasers could be tuned with temperature at a rate of 1 nm/K in the temperature range of 77-120 K. The full width at half maximum of the emitted spectra is similar to 0.4 cm(-1).
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页数：11
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