Concurrent events of memory and threshold switching in Ag/SiNx/Si devices

被引：5

作者：

Kim, Sungjun ^{[1
]}

Kim, Min-Hwi ^{[2
]}

Kim, Tae-Hyeon ^{[2
]}

Chen, Ying-Chen ^{[3
]}

Chang, Yao-Feng ^{[3
]}

Ismail, Muhammad ^{[1
]}

Kim, Yoon ^{[4
]}

Ryoo, Kyung-Chang ^{[5
]}

Park, Byung-Gook ^{[2
]}

机构：

[1] Chungbuk Natl Univ, Sch Elect Engn, Cheongju 28644, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Dept Elect & Comp Engn, Seoul 08826, South Korea

[3] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[4] Pusan Natl Univ, Nanoconvergence Technol Div, Dept Nanoenergy Engn, Busan 46241, South Korea

[5] Samsung Elect Co Ltd, Applicat Engn Team, Memory Div, Hwaseong Si 18448, Gyeonggi Do, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2018年 / 36卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

RANDOM-ACCESS MEMORY; BEHAVIOR; OXIDE;

D O I：

10.1116/1.5034058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiNx/p(++)-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 mu A while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiN x determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiNx/p(++)-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design. Published by the AVS.

引用

页数：4

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