Concurrent events of memory and threshold switching in Ag/SiNx/Si devices

被引：5

作者：

Kim, Sungjun ^{[1
]}

Kim, Min-Hwi ^{[2
]}

Kim, Tae-Hyeon ^{[2
]}

Chen, Ying-Chen ^{[3
]}

Chang, Yao-Feng ^{[3
]}

Ismail, Muhammad ^{[1
]}

Kim, Yoon ^{[4
]}

Ryoo, Kyung-Chang ^{[5
]}

Park, Byung-Gook ^{[2
]}

机构：

[1] Chungbuk Natl Univ, Sch Elect Engn, Cheongju 28644, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Dept Elect & Comp Engn, Seoul 08826, South Korea

[3] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[4] Pusan Natl Univ, Nanoconvergence Technol Div, Dept Nanoenergy Engn, Busan 46241, South Korea

[5] Samsung Elect Co Ltd, Applicat Engn Team, Memory Div, Hwaseong Si 18448, Gyeonggi Do, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2018年 / 36卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

RANDOM-ACCESS MEMORY; BEHAVIOR; OXIDE;

D O I：

10.1116/1.5034058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiNx/p(++)-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 mu A while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiN x determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiNx/p(++)-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design. Published by the AVS.

引用

页数：4

共 50 条

[21] THRESHOLD AND MEMORY SWITCHING IN POLYCRYSTALLINE SILICON
MAHAN, JE
APPLIED PHYSICS LETTERS, 1982, 41 (05) : 479 - 481
[22] Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current
Chen, Tong
Leng, Kangmin
Ma, Zhongyuan
Jiang, Xiaofan
Chen, Kunji
Li, Wei
Xu, Jun
Xu, Ling
NANOMATERIALS, 2023, 13 (01)
[23] Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices
Wu, Zuheng
Zhao, Xiaolong
Yang, Yang
Wang, Wei
Zhang, Xumeng
Wang, Rui
Cao, Rongrong
Liu, Qi
Banerjee, Writam
NANOSCALE ADVANCES, 2019, 1 (09): : 3753 - 3760
[24] Switching dynamics of TaOx-based threshold switching devices
Goodwill, Jonathan M.
Gala, Darshil K.
Bain, James A.
Skowronski, Marek
JOURNAL OF APPLIED PHYSICS, 2018, 123 (11)
[25] AMORPHOUS-SEMICONDUCTOR DEVICES DISPLAYING MEMORY IN ONE POLARITY AND THRESHOLD SWITCHING IN OPPOSITE POLARITY
NICOLAIDES, RV
APPLIED PHYSICS LETTERS, 1974, 24 (07) : 331 - 333
[26] Threshold switching via electric field induced crystallization in phase-change memory devices
Diosdado, Jorge A. Vazquez
Ashwin, Peter
Kohary, Krisztian I.
Wright, C. David
APPLIED PHYSICS LETTERS, 2012, 100 (25)
[27] Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices
Nishant Saxena
Christoph Persch
Matthias Wuttig
Anbarasu Manivannan
Scientific Reports, 9
[28] Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices
Saxena, Nishant
Persch, Christoph
Wuttig, Matthias
Manivannan, Anbarasu
SCIENTIFIC REPORTS, 2019, 9 (1)
[29] Effect of cation amount in the electrolyte on characteristics of Ag/TiO2 based threshold switching devices
Yoo, Jongmyung
Song, Jeonghwan
Hwang, Hyunsang
NANOTECHNOLOGY, 2018, 29 (36)
[30] Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
Lee, Jong Ho
Kim, Gun Hwan
Ahn, Young Bae
Park, Ji Woon
Ryu, Seung Wook
Hwang, Cheol Seong
Kim, Hyeong Joon
APPLIED PHYSICS LETTERS, 2012, 100 (12)

← 1 2 3 4 5 →