Composition-dependent defect structure of heteroepitaxial CuInS2 films grown by molecular beam epitaxy

被引：0
|
作者：
Hunger, R
Su, DS
Krost, A
Ellmer, K
Giersig, M
Lewerenz, HJ
Scheer, R
机构：
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Dept Phys Chem, D-14109 Berlin, Germany
[2] Berlin Univ Technol, Inst Solid State Phys, D-10623 Berlin, Germany
来源：
TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Epitaxial CuInS2/Si(111) films were prepared by molecular beam epitaxy in a composition range [In]/([Cu]+[In])=0.42-0.54. The about 100nm thick epilayers were characterized by double crystal x-ray diffraction. Whereas Cu-rich films with low defect density were obtained, the FWHM of In-rich films is increased by a factor 2-3. Transmission electron microscopy reveals that In-rich films are characterized by enhanced stacking faulting and twin formation on (112) and (11(2) over bar) planes. Cu-rich films exhibit relatively few stacking faults and microtwins only on (112).
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页码：753 / 756
页数：4
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