Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

被引：14

作者：

Izhnin, I. I. ^{[1
,2
]}

Dvoretsky, S. A. ^{[3
]}

Mynbaev, K. D. ^{[4
,5
]}

Fitsych, O. I. ^{[6
]}

Mikhailov, N. N. ^{[3
]}

Varavin, V. S. ^{[3
]}

Pociask-Bialy, M. ^{[7
]}

Voitsekhovskii, A. V. ^{[2
]}

Sheregii, E. ^{[7
]}

机构：

[1] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine

[2] Natl Res Tomsk State Univ, Tomsk 634050, Russia

[3] Russian Acad Sci, Siberian Branch, AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[4] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] ITMO Univ, St Petersburg 197101, Russia

[6] P Sahaydachnyi Army Acad, UA-79012 Lvov, Ukraine

[7] Rzeszow Univ, Ctr Microelect & Nanotechnol, PL-35310 Rzeszow, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 16期

关键词：

ELECTRICAL-PROPERTIES; POINT-DEFECTS; RELAXATION; MBE;

D O I：

10.1063/1.4872246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of "stirring" defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 degrees C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper. (C) 2014 AIP Publishing LLC.

引用

页数：7

共 50 条

[1] Arsenic incorporation in HgCdTe grown by molecular beam epitaxy
Aqariden, F
Wijewarnasuriya, PS
Sivananthan, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1309 - 1311
[2] Arsenic incorporation in HgCdTe grown by molecular beam epitaxy
Wijewarnasuriya, PS
Sivananthan, S
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (14) : 1694 - 1696
[3] Electrical and optical studies of a tellurium-related defect in molecular-beam epitaxy-grown HgCdTe
Swiatek, Z.
Yakushev, M. V.
Izhnin, I. I.
Ozga, P.
Mynbaev, K. D.
Varavin, V. S.
Marin, D. V.
Mikhailov, N. N.
Dvoretsky, S. A.
Voitsekhovski, A. V.
Savytskyy, H. V.
Bonchyk, O. Yu.
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, 13 (7-9): : 461 - 464
[4] Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
Izhnin, I. I.
Izhnin, A. I.
Savytskyy, H. V.
Vakiv, M. M.
Stakhira, Y. M.
Fitsych, O. E.
Yakushev, M. V.
Sorochkin, A. V.
Sabinina, I. V.
Dvoretsky, S. A.
Sidorov, Yu G.
Varavin, V. S.
Pociask-Bialy, M.
Mynbaev, K. D.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (03)
[5] Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy
Tsen, G. K. O.
Sewell, Z.
Atanacio, A. J.
Prince, K. E.
Musca, C. A.
Dell, J. M.
Antoszewski, J.
Faraone, L.
[J]. 2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, 2006, : 55 - +
[6] Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy
Swiatek, Z.
Ozga, P.
Izhnin, I. I.
Fitsych, E. I.
Voitsekhovskii, A. V.
Korotaev, A. G.
Mynbaev, K. D.
Varavin, V. S.
Dvoretsky, S. A.
Mikhailov, N. N.
Yakushev, M. V.
Bonchyk, A. Yu.
Savytsky, H. V.
[J]. RUSSIAN PHYSICS JOURNAL, 2016, 59 (03) : 442 - 445
[7] Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy
Z. Świątek
P. Ozga
I. I. Izhnin
E. I. Fitsych
A. V. Voitsekhovskii
A. G. Korotaev
K. D. Mynbaev
V. S. Varavin
S. A. Dvoretsky
N. N. Mikhailov
M. V. Yakushev
A. Yu. Bonchyk
H. V. Savytsky
[J]. Russian Physics Journal, 2016, 59 : 442 - 445
[8] Optical properties of molecular beam epitaxy-grown HgCdTe structures with potential wells
Ivanov-Omskii, V. I.
Mynbaev, K. D.
Bazhenov, N. L.
Smirnov, V. A.
Mikhailov, N. N.
Sidorov, G. Yu.
Remesnik, V. G.
Varavin, V. S.
Dvoretsky, S. A.
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6, 2010, 7 (06): : 1621 - 1623
[9] Arsenic δ-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy
Tsen, G. K. O.
Musca, C. A.
Dell, J. M.
Antoszewski, J.
Faraone, L.
Becker, C. R.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (08)
[10] Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe
Madni, I.
Umana-Membreno, G. A.
Lei, W.
Gu, R.
Antoszewski, J.
Faraone, L.
[J]. APPLIED PHYSICS LETTERS, 2015, 107 (18)

← 1 2 3 4 5 →