Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy

被引：2
|
作者：
Tsen, G. K. O. [1 ]
Sewell, Z. [1 ]
Atanacio, A. J. [2 ]
Prince, K. E. [2 ]
Musca, C. A. [1 ]
Dell, J. M. [1 ]
Antoszewski, J. [1 ]
Faraone, L. [1 ]
机构：
[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
[2] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia
来源：
2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2006年
基金：
澳大利亚研究理事会;
关键词：
D O I：
10.1109/COMMAD.2006.4429878
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Extrinsic p-type doping of Mercury Cadmium Telluride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier transform Infrared transmission Spectrometry (FTIR), Secondary Ion Mass Spectrometry (SIMS) as well as variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) to study the Hall effect characteristics. Arsenic activation annealing of the samples were performed and magneto-transport measurements repeated. Results indicate that as-grown samples show n-type behaviour indicating that arsenic incorporate as donors in the material with annealed samples showing p-type characteristics with heavy compensation.
引用
收藏
页码：55 / +
页数：2
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