Characterisation of arsenic doped HgCdTe grown by molecular beam epitaxy

被引：2

作者：

Tsen, G. K. O. ^{[1
]}

Sewell, Z. ^{[1
]}

Atanacio, A. J. ^{[2
]}

Prince, K. E. ^{[2
]}

Musca, C. A. ^{[1
]}

Dell, J. M. ^{[1
]}

Antoszewski, J. ^{[1
]}

Faraone, L. ^{[1
]}

机构：

[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

[2] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia

来源：

2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2006年

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1109/COMMAD.2006.4429878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extrinsic p-type doping of Mercury Cadmium Telluride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier transform Infrared transmission Spectrometry (FTIR), Secondary Ion Mass Spectrometry (SIMS) as well as variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) to study the Hall effect characteristics. Arsenic activation annealing of the samples were performed and magneto-transport measurements repeated. Results indicate that as-grown samples show n-type behaviour indicating that arsenic incorporate as donors in the material with annealed samples showing p-type characteristics with heavy compensation.

引用

页码：55 / +

页数：2

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