Crystallinity improvement of HgCdTe on GaAs grown by molecular beam epitaxy

被引：0
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作者：
Sasaki, Tokuhito [1 ]
Tomono, Mitsuko [1 ]
Oda, Naoki [1 ]
机构：
[1] Material Development Cent, Kanagawa, Japan
来源：
Journal of Crystal Growth | 1995年 / 150卷 / 1 -4 pt 2期
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摘要：
14
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页码：785 / 789
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