Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

被引：14
|
作者：
Izhnin, I. I. [1 ,2 ]
Dvoretsky, S. A. [3 ]
Mynbaev, K. D. [4 ,5 ]
Fitsych, O. I. [6 ]
Mikhailov, N. N. [3 ]
Varavin, V. S. [3 ]
Pociask-Bialy, M. [7 ]
Voitsekhovskii, A. V. [2 ]
Sheregii, E. [7 ]
机构：
[1] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine
[2] Natl Res Tomsk State Univ, Tomsk 634050, Russia
[3] Russian Acad Sci, Siberian Branch, AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[4] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[5] ITMO Univ, St Petersburg 197101, Russia
[6] P Sahaydachnyi Army Acad, UA-79012 Lvov, Ukraine
[7] Rzeszow Univ, Ctr Microelect & Nanotechnol, PL-35310 Rzeszow, Poland
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 16期
关键词：
ELECTRICAL-PROPERTIES; POINT-DEFECTS; RELAXATION; MBE;
D O I：
10.1063/1.4872246
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of "stirring" defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 degrees C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper. (C) 2014 AIP Publishing LLC.
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页数：7
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