Energy relaxation and transport of indirect excitons in AlAs/GaAs coupled quantum wells in magnetic field

被引：10
|
作者：
Butov, LV [1 ]
Filin, AI [1 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia
来源：
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 1998年 / 87卷 / 03期
关键词：
D O I：
10.1134/1.558700
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The evolution of indirect exciton luminescence in AlAs/GaAs coupled quantum wells after excitation by pulsed laser radiation has been studied in strong magnetic fields (B less than or equal to 12 T) at low temperatures (T greater than or equal to 1.3 K), both in the normal regime and under conditions of anomalously fast exciton transport, which is an indication of the onset of exciton superfluidity. The energy relaxation rate of indirect excitons measured in the range of relaxation times between several and several hundreds of nanoseconds is found to be controlled by the properties of the exciton transport, specifically, this parameter increases with the coefficient of excitonic diffusion. This behavior is qualitatively explained in terms of migration of excitons between local minima of the random potential in the plane of the quantum well. (C) 1998 American Institute of Physics. [S1063-7761(98)02509-8].
引用
收藏
页码：608 / 611
页数：4
相关论文
共 50 条
  • [21] Indirect excitons in (111) GaAs double quantum wells
    Hubert, C.
    Biermann, K.
    Hernandez-Minguez, A.
    Santos, P. V.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2017, 108 : 51 - 56
  • [22] Long-lived spin coherence of indirect excitons in GaAs coupled quantum wells
    Beian, Mussie
    Alloing, Mathieu
    Cambril, Edmond
    Carbonell, Carmen Gomez
    Osmond, Johann
    Lemaitre, Aristide
    Dubin, Francois
    [J]. EPL, 2015, 110 (02) : 27001
  • [23] Spin splitting of excitons in GaAs quantum wells at zero magnetic field
    Munoz, L
    Perez, E
    Vina, L
    FernandezRossier, J
    Tejedor, C
    Ploog, K
    [J]. SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 755 - 758
  • [24] Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field
    Sivalertporn, K.
    Mouchliadis, L.
    Ivanov, A. L.
    Philp, R.
    Muljarov, E. A.
    [J]. PHYSICAL REVIEW B, 2012, 85 (04):
  • [25] Intersubband relaxation of hot excitons in GaAs quantum wells
    Segawa, Y.
    Yasui, T.
    Limura, Y.
    Rodrigues, R.
    Hopfel, R.A.
    Aoyagi, Y.
    Goodnick, S.M.
    [J]. Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 733 - 735
  • [26] Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment
    Shamirzaev, T. S.
    Rautert, J.
    Yakovlev, D. R.
    Debus, J.
    Gornov, A. Yu.
    Glazov, M. M.
    Ivchenko, E. L.
    Bayer, M.
    [J]. PHYSICAL REVIEW B, 2017, 96 (03)
  • [27] Binding energies of excitons in GaAs/AlAs quantum wells under pressure
    Zhao, GJ
    Liang, XX
    Ban, SL
    [J]. MODERN PHYSICS LETTERS B, 2003, 17 (16): : 863 - 870
  • [28] Electrostatic Lattices for Indirect Excitons in Coupled Quantum Wells
    Remeika, M.
    Fogler, M. M.
    Butov, L. V.
    Hanson, M.
    Gossard, A. C.
    [J]. 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [29] Superfluidity of 'dirty' indirect excitons in coupled quantum wells
    Berman, OL
    Lozovik, YE
    Snoke, DW
    Coalson, RD
    [J]. SOLID STATE COMMUNICATIONS, 2005, 134 (1-2) : 47 - 50
  • [30] Pattern formation of indirect excitons in coupled quantum wells
    Liu, C. S.
    Luo, H. G.
    Wu, W. C.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (42) : 9659 - 9668
12345