Computational study of stacking faults in sapphire using total energy methods

被引:25
|
作者
Jhon, MH [1 ]
Glaeser, AM
Chrzan, DC
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevB.71.214101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structures and energetics of stacking faults on the prism planes in sapphire are studied computationally using total energy methods. Both first principles methods and empirical potentials are used to study four competing stacking fault structures on {1 (1) over bar 00} and one structure on {11 (2) over bar0}. Estimates for the vibrational contribution to the fault energy are obtained using empirical shell-model potentials. The calculated stacking fault energies are combined with anisotropic elasticity theory to predict the structure of low-angle symmetric tilt boundaries.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] METHODS OF DETERMINING ENERGY OF STACKING FAULTS (REVIEW)
    VISHNYAK.YD
    KHAIMOVI.VS
    INDUSTRIAL LABORATORY, 1967, 33 (12): : 1737 - &
  • [2] HREM study of stacking faults in GaN layers grown over sapphire substrate
    Potin, V
    Ruterana, P
    Nouet, G
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (49) : 10301 - 10306
  • [3] On the energy of terminated stacking faults
    Mullner, P
    Ferreira, PJ
    PHILOSOPHICAL MAGAZINE LETTERS, 1996, 73 (06) : 289 - 297
  • [4] HREM study of basal stacking faults in GaN layers grown over sapphire substrate
    Potin, V
    Gil, B
    Charar, S
    Ruterana, P
    Nouet, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 114 - 116
  • [5] Energy of stacking faults in transition metals
    Gaevskii, A.Yu.
    Korol, Ya.D.
    Ustinov, A.I.
    Physics of Metals (English Translation of Metallofizika), 1994, 13 (01):
  • [6] Experimental and computational studies on stacking faults in zinc titanate
    Sun, W.
    Ageh, V.
    Mohseni, H.
    Scharf, T. W.
    Du, J.
    APPLIED PHYSICS LETTERS, 2014, 104 (24)
  • [7] Stacking faults and stacking fault energy of hexagonal barium titanate
    Wu, Yu-Chuan
    Wang, Sea-Fue
    Lu, Hong-Yang
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (12) : 3778 - 3787
  • [8] Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AIN nucleation layer
    Chen, Zhibin
    Zhang, Jincheng
    Xu, Shengrui
    Xue, Junshuai
    Jiang, Teng
    Hao, Yue
    MATERIALS RESEARCH BULLETIN, 2017, 89 : 193 - 196
  • [9] THE SELF-ENERGY AND INTERACTION ENERGY OF STACKING FAULTS IN METALS
    ATTREE, RW
    PLASKETT, JS
    PHILOSOPHICAL MAGAZINE, 1956, 1 (10): : 885 - 911
  • [10] Detailed study of stacking faults in martensite
    Condo, AM
    Lovey, FC
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C8): : 811 - 816