Experimental and computational studies on stacking faults in zinc titanate

被引:9
|
作者
Sun, W. [1 ]
Ageh, V. [1 ]
Mohseni, H. [1 ]
Scharf, T. W. [1 ]
Du, J. [1 ]
机构
[1] Univ N Texas, Dept Mat Sci & Engn, Denton, TX 76203 USA
基金
美国国家科学基金会;
关键词
MOLECULAR-DYNAMICS; SIMULATION; BEHAVIOR;
D O I
10.1063/1.4883747
中图分类号
O59 [应用物理学];
学科分类号
摘要
Zinc titanate (ZnTiO3) thin films grown by atomic layer deposition with ilmenite structure have recently been identified as an excellent solid lubricant, where low interfacial shear and friction are achieved due to intrafilm shear velocity accommodation in sliding contacts. In this Letter, high resolution transmission electron microscopy with electron diffraction revealed that extensive stacking faults are present on ZnTiO3 textured (104) planes. These growth stacking faults serve as a pathway for dislocations to glide parallel to the sliding direction and hence achieve low interfacial shear/friction. Generalized stacking fault energy plots also known as gamma-surfaces were computed for the (104) surface of ZnTiO3 using energy minimization method with classical effective partial charge potential and verified by using density functional theory first principles calculations for stacking fault energies along certain directions. These two are in qualitative agreement but classical simulations generally overestimate the energies. In addition, the lowest energy path was determined to be along the [45 (1) over bar] direction and the most favorable glide system is {104} < 45 (1) over bar > that is responsible for the experimentally observed sliding-induced ductility. (C) 2014 AIP Publishing LLC.
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页数:5
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