Computational study of stacking faults in sapphire using total energy methods

被引:25
|
作者
Jhon, MH [1 ]
Glaeser, AM
Chrzan, DC
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevB.71.214101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structures and energetics of stacking faults on the prism planes in sapphire are studied computationally using total energy methods. Both first principles methods and empirical potentials are used to study four competing stacking fault structures on {1 (1) over bar 00} and one structure on {11 (2) over bar0}. Estimates for the vibrational contribution to the fault energy are obtained using empirical shell-model potentials. The calculated stacking fault energies are combined with anisotropic elasticity theory to predict the structure of low-angle symmetric tilt boundaries.
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页数:5
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