Low-Temperature III-V Direct Wafer Bonding Surface Preparation Using a UV-Sulfur Process

被引：14
|
作者：
Jackson, Michael J. [1 ]
Chen, Li-Min [1 ]
Kumar, Ankit [1 ]
Yang, Yang [1 ]
Goorsky, Mark S. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 01期
关键词：
Wafer bonding; materials integration; III-V; sulfur passivation; COMPOUND SEMICONDUCTORS; GAAS; EXFOLIATION; ADHESION;
D O I：
10.1007/s11664-010-1397-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A technique for direct wafer bonding of III-V materials utilizing a dry sulfur passivation method is presented. Large-area bonding occurs for GaAs/GaAs and InP/InP at room temperature. Bulk fracture strength is achieved after annealing GaAs/GaAs at 400 degrees C and InP/InP at 300 degrees C for times less than 12 h without large compressive forces. X-ray photoelectron spectroscopy measurements of the treated, bonded, and subsequently delaminated surfaces of GaAs/GaAs confirm that sulfide is present at the interface and that the oxide components show a reduced concentration when compared with samples treated with only an oxide etch solution.
引用
收藏
页码：1 / 5
页数：5
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