Low-Temperature III-V Direct Wafer Bonding Surface Preparation Using a UV-Sulfur Process

被引：14

作者：

Jackson, Michael J. ^{[1
]}

Chen, Li-Min ^{[1
]}

Kumar, Ankit ^{[1
]}

Yang, Yang ^{[1
]}

Goorsky, Mark S. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 01期

关键词：

Wafer bonding; materials integration; III-V; sulfur passivation; COMPOUND SEMICONDUCTORS; GAAS; EXFOLIATION; ADHESION;

D O I：

10.1007/s11664-010-1397-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique for direct wafer bonding of III-V materials utilizing a dry sulfur passivation method is presented. Large-area bonding occurs for GaAs/GaAs and InP/InP at room temperature. Bulk fracture strength is achieved after annealing GaAs/GaAs at 400 degrees C and InP/InP at 300 degrees C for times less than 12 h without large compressive forces. X-ray photoelectron spectroscopy measurements of the treated, bonded, and subsequently delaminated surfaces of GaAs/GaAs confirm that sulfide is present at the interface and that the oxide components show a reduced concentration when compared with samples treated with only an oxide etch solution.

引用

页码：1 / 5

页数：5

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