Electrochemical Formation of Cu Nanowires on W Surface Patterned by Atomic Force Microscope Tip

被引:1
|
作者
Kim, Sunjung [1 ]
Park, Kye-Sun [1 ]
Kim, Soo-Hyun [2 ]
机构
[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
[2] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 712749, South Korea
基金
新加坡国家研究基金会;
关键词
COPPER NANOWIRES; ELECTRODEPOSITION; ARRAYS;
D O I
10.1149/2.024111esl
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Cu nanowires are directly patterned on W diffusion barrier surface by electrodeposition without using any template. Prior to Cu nanowire growth, a photoresist (PR) film coated over the W surface was mechanically patterned in a random manner with atomic force microscope (AFM) tip. Polycrystalline Cu nanowires in the shape of beaded string were electrochemically formed along line patterns on the W surface. This new approach of Cu nanowire synthesis suggests the feasibility of fabricating Cu interconnects for Si-based electronic devices by direct Cu nanowire patterning. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.024111esl] All rights reserved.
引用
收藏
页码:D103 / D106
页数:4
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