1/f noise in hydrogenated amorphous silicon-germanium alloys

被引：6
|
作者：
Johanson, RE [1 ]
Günes, M
Kasap, SO
机构：
[1] Univ Saskatchewan, Dept Elect Engn, Saskatoon, SK S7N 5A9, Canada
[2] Izmir Inst Technol, Dept Phys, TR-35210 Izmir, Turkey
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2003年 / 150卷 / 04期
关键词：
D O I：
10.1049/ip-cds:20030749
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements were made of conductance noise of a-Si:H and a-Si1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloyinzg with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples.
引用
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页码：345 / 349
页数：5
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