Influence of phonon confinement on the optically detected magneto-phonon resonance line-width in quantum wells

被引：15

作者：

Tran Cong Phong ^{[1
]}

Le Thi Thu Phuong ^{[2
]}

Nguyen Dinh Hien ^{[2
]}

Vo Thanh Lam ^{[3
]}

机构：

[1] Vietnam Inst Educ Sci, Ha Noi City, Vietnam

[2] Hue Univ Coll Educ, Ctr Theoret & Computat Phys, Hue City, Vietnam

[3] Sai Gon Univ, Dept Phys, Ho Chi Minh City, Vietnam

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 71卷

关键词：

Line-width; Absorption power; Quantum wells; Optically detected magneto phonon resonance; CYCLOTRON-RESONANCE; ENHANCEMENT FACTOR; SCATTERING RATES; TEMPERATURE-DEPENDENCE; EXCITON LINEWIDTH; PROJECTION TECHNIQUE; ACOUSTIC PHONONS; WIRE STRUCTURES; ELECTRON; RELAXATION;

D O I：

10.1016/j.physe.2015.04.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the influence of phonon confinement on the optically detected magneto phonon resonance (ODMPR) effect and ODMPR line width in quantum wells. The ODMPR conditions as functions of the well's width and the photon energy are also obtained. The shifts of ODMPR peaks caused by the confined phonon are discussed. The numerical result for the GaAs/AlAs quantum well shows that in the two cases of confined and bulk phonons, the line width (LW) decreases with increasing well's width and increases with increasing temperature. Furthermore, in the small range of the well's width, the influence of phonon confinement plays an important role and cannot be neglected in reaching the ODMPR line width. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：79 / 83

页数：5

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