Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

被引：33
|
作者：
Friel, I
Driscoll, K
Kulenica, E
Dutta, M
Paiella, R
Moustakas, TD
机构：
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期
关键词：
molecular beam epitaxy; quantum wells; nitrides; intersubband absorption;
D O I：
10.1016/j.jcrysgro.2005.01.042
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
AIN/GaN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0 0 0 1) sapphire substrates. Intersubband (ISB) absorption in the range of 1.5-1.9 μ m was investigated in these structures as a function of the main quantum well design parameters. It is found that the ISB transition line width does not depend strongly on the degree of strain relaxation in the investigated structures, but rather is sensitive to both the well and barrier widths. This is explained by considering well/barrier thickness fluctuations. A reduction in the ISB absorption line width was achieved by doping the wells in the first 5&ANGS; only as compared to uniformly doping the wells. ISB absorption was also demonstrated for the case in which the AIN barriers only were doped. © 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：387 / 392
页数：6
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