INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：4

作者：

BROWN, GJ ^{[1
]}

HEGDE, SM ^{[1
]}

HOFF, J ^{[1
]}

JELEN, C ^{[1
]}

SLIVKEN, S ^{[1
]}

MICHEL, E ^{[1
]}

DUCHEMIN, O ^{[1
]}

BIGAN, E ^{[1
]}

RAZEGHI, M ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,CTR QUANTUM DEVICES,DEPT ELECT ENGN,EVANSTON,IL 60201

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-doped GaAs-GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x-ray diffraction. A narrow low-temperature photoluminescence full width at half-maximum has been measured. Strong hole intersubband absorption has been observed at 9 mum, and its dependence on light polarization has been investigated.

引用

页码：1130 / 1132

页数：3

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