INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：4
|
作者：
BROWN, GJ [1 ]
HEGDE, SM [1 ]
HOFF, J [1 ]
JELEN, C [1 ]
SLIVKEN, S [1 ]
MICHEL, E [1 ]
DUCHEMIN, O [1 ]
BIGAN, E [1 ]
RAZEGHI, M [1 ]
机构：
[1] NORTHWESTERN UNIV,CTR QUANTUM DEVICES,DEPT ELECT ENGN,EVANSTON,IL 60201
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期
关键词：
D O I：
10.1063/1.112119
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
P-doped GaAs-GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x-ray diffraction. A narrow low-temperature photoluminescence full width at half-maximum has been measured. Strong hole intersubband absorption has been observed at 9 mum, and its dependence on light polarization has been investigated.
引用
收藏
页码：1130 / 1132
页数：3
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