Influence of Yb on valence band density of states of CdYbTe and PbYbTe - A resonant photoemission study

被引：1
|
作者：
SzamotaSadowska, K
Kowalski, BJ
Guziewicz, E
Orlowski, BA
Sadowski, J
Golacki, Z
Ghijsen, J
Johnson, RL
Belkhou, R
Radosavkic, D
Martinotti, D
Barrett, N
Guillot, C
机构：
[1] FAC UNIV NOTRE DAME PAIX,LAB INTERDISCIPLINAIRE SPECT ELECT,B-5000 NAMUR,BELGIUM
[2] UNIV HAMBURG,INST EXPT PHYS 2,D-22761 HAMBURG 50,GERMANY
[3] CTR UNIV PARIS SUD,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE
[4] CEA SACLAY,SRSIM,DRECAM,F-91191 GIF SUR YVETTE,FRANCE
来源：
ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期
关键词：
D O I：
10.12693/APhysPolA.90.943
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f(14) were observed at the binding energies close to the edge of the valence band while the 4f(13) states were revealed deep in the valence band.
引用
收藏
页码：943 / 946
页数：4
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