Valence-band photoemission study of single crystalline CeNiSn

被引:13
|
作者
Kang, JS [1 ]
Olson, CG
Inada, Y
Onuki, Y
Kwon, SK
Min, BI
机构
[1] Catholic Univ Korea, Dept Phys, Puchon 422743, South Korea
[2] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
[3] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 560, Japan
[4] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 08期
关键词
D O I
10.1103/PhysRevB.58.4426
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of single crystalline CeNiSn has been investigated using photoemission spectroscopy. The extracted Ce 4f spectrum exhibits three peak structures; the typical Fermi level and 2 eV peaks, and another between them, similar to 0.9 eV below the Fermi level E-F. The near-E-F peak reflects a substantial Ce 4f-Sn sp hybridization, whereas the 0.9 eV peak arises from the Ce 4f-Ni 3d and Ce 5d-Ni 3d hybridization. A Ni 3d satellite feature is observed about 6 eV below the Ni 3d main band, indicating a strong Ni 3d Coulomb correlation in CeNiSn. The high-resolution photoemission study indicates a finite metallic density of states at EF implying a semimetallic ground state. The electronic states near EF are found to have mixed character from the Sn sp, Ce 5d, Ce 4f, and Ni 3d electrons. Constant-initial-state and constant-final-state yield spectra across the 4d-->4f threshold indicate the Ce valence to be close to 3+.
引用
收藏
页码:4426 / 4431
页数:6
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