Diode laser annealing of epitaxy Ge on sapphire (0001) grown by magnetron sputtering

被引：5

作者：

Liu, Ziheng ^{[1
]}

Hao, Xiaojing ^{[1
]}

Huang, Jialiang ^{[1
]}

Ho-Baillie, Anita ^{[1
]}

Varlamov, Sergey ^{[1
]}

Green, Martin A. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

MATERIALS LETTERS | 2017年 / 208卷

基金：

澳大利亚研究理事会;

关键词：

Germanium; Epitaxy; Sapphire; Magnetron sputtering; Laser annealing; MOLECULAR-BEAM EPITAXY; GERMANIUM; SILICON; 11BAR02;

D O I：

10.1016/j.matlet.2017.05.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, magnetron sputtering was used to epitaxially grow Ge films on sapphire at low temperatures (400 degrees C-500 degrees C) and diode laser annealing was employed to improve the crystallinity of the Ge films. The deposition temperature might slightly influence the crystallinity of the Ge film through affecting the diffusion rate of Ge. After laser scans of milliseconds exposure time, significant defect density reduction and removal of polycrystalline portion are achieved. Magnetron sputtering combined with diode laser annealing offers a low-cost and fast method in fabricating high quality single crystalline Ge on sapphire which is potentially capable of large-scale production. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：35 / 38

页数：4

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