Long-term stability and oxide stress influence on capacitive pressure sensors fabricated with wafer bonding

被引：0

作者：

Goustouridis, D ^{[1
]}

Normand, P ^{[1
]}

Tsoukalas, D ^{[1
]}

机构：

[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece

来源：

EUROSENSORS XII, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we present detailed characterization results on silicon capacitive pressure sensing elements. The device fabrication technology is based on wafer bonding and includes critical variations from the previously proposed process by the same authors resulting in much higher device response uniformity. Emphasis it is given here on drift as well as on fatigue measurements since these effects determine the long-term reliability of the devices.

引用

页码：31 / 34

页数：4

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