Compact Modeling of I-V Characteristics in Irradiated MOSFETs: Impact of Operation Temperature and Interface Traps

被引：0
|
作者：
Orlov, V. V. [1 ]
Felitsyn, V. A. [1 ]
Zebrev, G. I. [1 ]
机构：
[1] Natl Res Nucl Univ MEPHI, Dept Micro & Nanoelect, Moscow, Russia
来源：
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年
关键词：
compact modeling; MOSFET; ionizing radiation; LEAKAGE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have presented a new compact MOSFET model, which allows us to describe the I-V characteristics of heavily irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap densities.
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页数：4
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