In this work, two-dimensional thin films were prepared by pulsed laser deposition (PLD) via backside irradiation. For this, a handmade transparent target holder made of quartz-glass was used to hold the powder targets. Visible-wavelength pulsed laser irradiation was applied from the holder side to the substrate. Using this new method, indium (In) and zinc (Zn)-concentrated thin films were prepared on a silicon substrate. The deposition rate of the film prepared with this method was calculated from the thickest position of the prepared film and the deposition time. The deposition rate was lower than for films prepared via conventional PLD. Two-dimensional profiles of the prepared films via backside irradiation PLD displayed a convex shape and its spatial resolution strongly depended on the laser profile. X-ray photoelectron spectroscopy measurements suggested that tailored In and Zn composition thin films could be prepared with this method using an In2O3 and ZnO powder target. (c) 2019 The Japan Society of Applied Physics
机构:
Keio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, JapanKeio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
Sagawa, J
Nagare, S
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Keio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, JapanKeio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
Yuan, W.
Zhu, L. P.
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Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
Zhu, L. P.
Ye, Z. Z.
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Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
Ye, Z. Z.
Gu, X. Q.
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Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
机构:
Department of Materials Science, Sichuan University, Chengdu 610064, China
International Center for Materials Physics, Academia Sinica, Slienyang, 110015, ChinaDepartment of Materials Science, Sichuan University, Chengdu 610064, China
Zhu, Jianguo
Xiao, Dingquan
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Department of Materials Science, Sichuan University, Chengdu 610064, China
International Center for Materials Physics, Academia Sinica, Slienyang, 110015, ChinaDepartment of Materials Science, Sichuan University, Chengdu 610064, China
Xiao, Dingquan
Palmer, S.B.
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Department of Physics, University of Warwick, Coventry CV4 7AL, United KingdomDepartment of Materials Science, Sichuan University, Chengdu 610064, China
机构:
Indian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Bhoi, B.
Sahu, B.
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Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Sahu, B.
Venkataramani, N.
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Indian Inst Technol, Dept Met & Mat Sci, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Venkataramani, N.
Aiyar, R. P. R. C.
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Indian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
Aiyar, R. P. R. C.
Prasad, Shiva
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Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, IndiaIndian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India