Characterisation of SiOxCyHz thin films deposited by low-temperature PECVD

被引：35
|
作者：
Zanini, Stefano
Riccardi, Claudia
Orlandi, Marco
Grimoldi, Elisa
机构：
[1] Univ Studi Milano Bicocca, Dipartimento Fis Occhialini, I-20126 Milan, Italy
[2] Univ Studi Milano Bicocca, Dipartimento Sci Ambiente Territorio, I-20126 Milan, Italy
来源：
VACUUM | 2007年 / 82卷 / 02期
关键词：
PECVD; HMDSO; gas barrier; atomic force microscopy;
D O I：
10.1016/j.vacuum.2007.07.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SiOxCyHz thin films were deposited from hexamethyldisiloxane (HMDSO)/O-2 mixtures in a parallel plate, capacitively coupled, RF plasma reactor. Polyethylene terephthalate (PET), Si(100) wafers and KBr tablets were chosen as substrates. Effect of HMDSO/O-2 ratio, total treatment pressure and power input on the properties of the deposited films were investigated. The structure and bondings were studied by means of Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Wettability characteristics of the deposited thin films were investigated by means of water droplet contact angle measurements. Surface morphology was investigated with atomic force microscopy. Barrier properties of the SiOxCyHz thin films were investigated by measuring the water vapour transmission rate of the coated PET substrates. Correlations between the characteristics of the deposited film and their barrier properties were discussed. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：290 / 293
页数：4
相关论文
共 50 条
  • [41] Photocatalytic and photoelectrocatalytic degradation of aqueous Rhodamine B by low-temperature deposited anatase thin films
    Song, Xiao-Mei
    Wu, Jin-Ming
    Yan, Mi
    MATERIALS CHEMISTRY AND PHYSICS, 2008, 112 (02) : 510 - 515
  • [42] Low-temperature deposited ZnO thin films on the flexible substrate by cathodic vacuum arc technology
    Yang, Ru-Yuan
    Weng, Min-Hang
    Pan, Cheng-Tang
    Hsiung, Chin-Min
    Huang, Chun-Chih
    APPLIED SURFACE SCIENCE, 2011, 257 (16) : 7119 - 7122
  • [43] OPTICAL CHARACTERISTICS OF THIN-FILMS DEPOSITED AT LOW-TEMPERATURE USING ION ASSISTED DEPOSITION
    WILLIAMS, FL
    JACOBSON, RD
    MCNEIL, JR
    EXARHOS, GJ
    MCNALLY, JJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 2020 - 2021
  • [44] MOLECULAR-HYDROGEN CHEMISORPTION ON THIN UNSINTERED GOLD-FILMS DEPOSITED AT LOW-TEMPERATURE
    STOBINSKI, L
    DUS, R
    SURFACE SCIENCE, 1993, 298 (01) : 101 - 106
  • [45] HREM STUDY OF LOW-TEMPERATURE DEPOSITED PECVD SILICON LAYERS ON (001) SILICON SUBSTRATES
    VANHELLEMONT, J
    BAERT, K
    SYMONS, J
    NIJS, J
    MERTENS, R
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1988, (93): : 95 - 96
  • [46] HREM STUDY OF LOW-TEMPERATURE DEPOSITED PECVD SILICON LAYERS ON (001) SILICON SUBSTRATES
    VANHELLEMONT, J
    BAERT, K
    SYMONS, J
    NIJS, J
    MERTENS, R
    EUREM 88, VOLS 1-3: TUTORIALS, INSTRUMENTATION AND TECHNIQUES / PHYSICS AND MATERIALS / BIOLOGY, 1988, 93 : 95 - 96
  • [47] Effect of temperature on GaN films deposited on graphite substrates at low-temperature
    Duan, Zhongwei
    Qin, Fuwen
    Lin, Guoqiang
    Bian, Jiming
    Zhang, Dong
    Wang, Enping
    APPLIED SURFACE SCIENCE, 2013, 280 : 909 - 913
  • [48] A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor
    Aumaille, K
    Vallée, C
    Granier, A
    Goullet, A
    Gaboriau, F
    Turban, G
    THIN SOLID FILMS, 2000, 359 (02) : 188 - 196
  • [49] Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors
    Dalong Zhao
    Devin A. Mourey
    Thomas N. Jackson
    Journal of Electronic Materials, 2010, 39 : 554 - 558
  • [50] Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors
    Zhao, Dalong
    Mourey, Devin A.
    Jackson, Thomas N.
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (05) : 554 - 558
12345